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KSC5504D/KSC5504DT
KSC5504D/KSC5504DT
D2-PAK
High Voltage High Speed Power Switch Application
* * * * * Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices : D2-PAK or TO-220
B
Equivalent Circuit C
1
TO-220
E
1
1.Base
2.Collector
3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO V CEO VEBO IC ICP IB IBP PC TJ TSTG EAS Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature Avalanche Energy(Tj=25C) Value 1200 600 12 4 8 2 4 75 150 - 65 ~ 150 3 Units V V V A A A A W C C mJ
* Pulse Test : Pulse Width = 5ms, Duty Cycle 10%
Thermal Characteristics TC=25C unless otherwise noted
Symbol Rjc Rja TL Thermal Resistance Characteristics Junction to Case Junction to Ambient Maximun Lead Temperature for Soldering Purpose : 1/8" from Case for 5 seconds Rating 1.65 62.5 270 C Unit C/W
(c)2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC5504D/KSC5504DT
Electrical Characteristics TC=25C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICES ICEO IEBO hFE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC=1mA, IE=0 IC=5mA, IB=0 IE=500A, IC=0 VCES=1200V, VBE=0 VCE=600V, IB=0 VEB=12V, IC=0 VCE=1V, IC=0.5A VCE=1V, IC=2A VCE=2.5V, IC=1A VCE(sat) Collector-Emitter Saturation Voltage IC=0.5A, IB=0.05A IC=1A, IB=0.2A IC=2A, IB=0.4A VBE(sat) Base-Emitter Saturation Voltage IC=0.8A, IB=0.08A IC=2A, IB=0.4A Cib Cob fT VF Input Capacitance Output Capacitance Current Gain Bandwidth Product Diode Forward Voltage TC=25C TC=125C TC=25C TC=125C TC=25C TC=25C TC=125C TC=25C TC=125C TC=25C TC=125C TC=25C TC=125C TC=25C TC=125C TC=25C TC=125C TC=25C TC=125C TC=25C TC=125C VEB=10V, IC=0, f=1MHz VCB=10V, IE=0, f=1MHz IC=0.5A,VCE=10V IF=1A IF=2A TC=25C TC=125C TC=25C TC=125C 15 10 4 3 12 8 20 13 6 4.1 18 10 0.28 0.5 0.18 0.3 0.5 2.0 0.77 0.60 0.85 0.70 600 75 11 0.83 0.7 0.88 0.8 1.5 1.3 0.6 1.0 0.5 0.75 1.5 3.0 1.0 0.9 1.2 1.0 750 100 V V V V V V V V V V pF pF MHz V V V V 30 Min. 1200 600 12 Typ. 1350 750 13.7 100 500 100 500 10 35 A A Max. Units V V V A
(c)2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC5504D/KSC5504DT
Electrical Characteristics TC=25C unless otherwise noted
Symbol tfr Parameter Diode Froward Recvery Time (di/dt=10A/s) Dynamic Saturation Voltage Test Condition IF=0.4A IF=1A IF=2A IC=1A, IB1=100mA VCC=300V IC=2A, IB1=400mA VCC=300V RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=40s) tON tSTG tF tON tSTG tF Turn ON Time Storage Time Fall Time Turn ON Time Storage Time Fall Time IC=2A, IB1=0.4A IB2=0.4A, VCC=300V RL = 150 IC=2A, IB1=0.4A IB2=1A, VCC=300V RL = 150 TC=25C TC=125C TC=25C TC=125C TC=25C TC=125C TC=25C TC=125C TC=25C TC=125C TC=25C TC=125C INDUCTIVE LOAD SWITCHING (VCC=15V) tSTG tF tC tSTG tF tC Storage Time Fall Time Cross-over Time Storage Time Fall Time Cross-over Time IC=2A, IB1=0.4A IB2=0.4A, VCC=300V LC=200H IC=2A, IB1=0.4A IB2=1A, VZ=300V LC=200H TC=25C TC=125C TC=25C TC=125C TC=25C TC=125C TC=25C TC=125C TC=25C TC=125C TC=25C TC=125C 1.75 2.2 100 100 210 250 3.6 4.2 170 320 540 1.1 800 350 4.5 400 250 2.5 s s ns ns ns ns s s ns ns ns ns 160 170 1.5 1.7 125 160 170 175 2.8 3.1 400 850 650 3.5 300 300 2.5 250 ns ns s s ns ns ns ns s s ns ns @ 1s @ 3s @ 1s @ 3s Min Typ. 770 870 1.2 10 3 10 2 Max. Units ns ns s V V V V
VCE(DSAT)
(c)2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC5504D/KSC5504DT
Typical Characteristics
6
IB = 2 A
IC [A ], C O L LE C T O R C U R R E N T
V CE = 1 V
100
5
IB = 1.8 A IB = 1.6 A I B =1 .4 A I B =1 A IB = 80 0 m A I B = 60 0 m A I B =1 .2 A
T j = 1 25 C
o
4
h FE , DC CURRE NT GAIN
Tj = 25 C
o
3
IB = 40 0 m A
10
I B = 20 0 m A
2
1
0 0 1 2 3 4 5 6 7 8
1 1m 10m 100m 1
V C E [v ] , C O L L E C T O R E M IT T E R V O L T A G E
I
C
[A ] , C O LLE C T O R C U R R E N T
Figure 1. Static Characteristic
Figure 2. DC current Gain
I
C
=5I
B
I
C
= 10 I
B
10
10
1
VCE [V ], V O L T A G E
VCE[V ] , V O L T A G E
1
Tj = 125 C
o
Tj = 125 C
0.1
o
Tj = 25 C
10m 100m 1
o
0.1
Tj = 25 C
o
1m
1m
10m
100 m
1
I C [A ] , C O L L E C T O R C U R R E N T
I C [A ] , C O L L E C T O R C U R R E N T
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Collector-Emitter Saturation Voltage
2.0
10
T j =25 C I C = 1 .5 A
1.5
o
I
C
= 10 I
B
VCE[V ], V O L T A G E
I C = 0 .1 A
I C = 0 .5 A I C = 2 .0 A
VBE[V ], V O L T A G E
I C = 1 .0 A
1.0
1
Tj = 25 C
o
Tj = 125 C
o
0.5
0.0 1E-3
0.01
0.1
1
0.1 1m
10m
100m
1
I B [A ], B A S E C U R R E N T
I C [A ] , C O L L E C T O R C U R R E N T
Figure 5. Typical Collector Saturation Voltage
Figure 6. Base-Emitter Saturation Voltage
(c)2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC5504D/KSC5504DT
Typical Characteristics (Continued)
10
10
I
C
=5I
B
VBE[V ], V O L T A G E
V FD [V], V OLT A G E
1
1
Tj = 25 C
o
T j = 25 C
o
Tj = 125 C
o
T j = 12 5 C
o
0.1 1m
10m
100m
1
0.1 1m
10m
100m
1
I C [A ] , C O L L E C T O R C U R R E N T
IC [A ] , C O LLE C T O R C U R R E N T
Figure 7. Base-Emitter Saturation Voltage
Figure 8. Diode Forward Voltage
10k
10
f = 1 MH z
tSTG[u s], S T R O A G E T IM E
T j = 125 C
5
o
CAPACITANCE [pF]
1k
C ib
Tj = 25 C
o
C ob
100
I C = 5 I B1 = 5 I B2 V CC = 1 5 V VZ = 300 V LC = 200 uH
10 1 10 100
1 0.5 1
3
R EV E R S E VO LTA G E [V ]
I C [A ], C O L L E C T O R C U R R E N T
Figure 9. Collector Output Capacitance
Figure 10. Inductive Switching Time, tsi
1000
3000
500
tS[ns], CRO SS O VE R TIME
I C = 5 I B1 = 5 I B2 V CC = 15 V V Z = 30 0 V L C = 20 0 u H
I C = 5 I B1 = 5 I B2 V CC = 15 V V Z = 300 V L C = 200 u H
1000
tF[ns], FA LL TIME
T j = 125 C
o
T j = 25 C
o
T j = 12 5 C
o
T j = 25 C
o
100 0.5 1
100 3 0.5 1 3
I C [A ] , C O L L E C T O R C U R R E N T
I C [A ] , C O L L E C TO R C U R R E N T
Figure 11. Inductive Switching Time, tfi
Figure 12. Inductive Switching Time, tc
(c)2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC5504D/KSC5504DT
Typical Characteristics (Continued)
5
500
I C = 5 I B1 = 2 I B2 V CC = 1 5 V VZ = 300 V LC = 200 uH
I C = 5 IB 1 = 2 IB 2 V CC = 1 5 V VZ = 300 V LC = 200 uH
tSTG[u s], S TRO A G E TIM E
Tj = 125 C
o
tf[ns], FA LL TIM E
Tj = 25 C
o
Tj = 125 C
o
Tj = 25 C
o
100
1 0.5 1 3
50 0.5
1
3
I C [A ], C O L L E C T O R C U R R E N T
I C [A ], C O L L E C T O R C U R R E N T
Figure 13. Inductive Switching Time, tsi
Figure 14. Inductive Switching Time, tfi
1000
500
I C = 5 I B1 = 2 I B2 V CC = 1 5 V V Z = 3 00 V L C = 2 00 u H
I C = 5 I B1 = 5 I B2 V CC = 3 0 0 V PW = 40 us
tC[ns], CR O S S O V E R TIM E
tON[ns], O N TIM E
T j = 125 C
o
T j = 1 25 C
o
Tj = 25 C
o
T j = 25 C
o
100 0.5 1 3
100 0.5 1
3
I C [A ], C O L L E C T O R C U R R E N T
I C [A ], C O L L E C T O R C U R R E N T
Figure 15. Inductive Switching Time, tc
Figure 16. Resistive Switching Time, ton
10
2000
IC = 5 IB1 = 5 IB2 V CC = 3 0 0 V P W = 40 u s
T j = 125 C
o
I C = 5 I B1 = 5 I B2 V CC = 3 0 0 V PW = 40 us
1000
tSTG[us ], S T R O A G E T IM E
tF[n s], FA LL TIM E
T j = 25 C
o
T j = 125 C
o
T j = 25 C
o
1 0.5 1
3
100 0.5 1
3
I C [A ], C O L L E C T O R C U R R E N T
I C [A ], C O L L E C T O R C U R R E N T
Figure 17. Resistive Switching Time, tsi
Figure 18. Resistive Switching Time, tfi
(c)2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC5504D/KSC5504DT
Typical Characteristics (Continued)
500
5
I C = 5 I B1 = 2 I B2 V CC = 3 0 0 V PW = 40 us
I C = 5 I B1 = 2 I B2 V CC = 3 0 0 V PW = 40 us
tSTG[u s], S T R O A G E T IM E
tON[n s], O N T IM E
Tj = 125 C
o
T j = 125 C
o
T j = 25 C
o
Tj = 25 C
o
100
0.5
1
3
1 0.5 1 3
I C [A ], C O L L E C T O R C U R R E N T
I C [A ], C O L L E C T O R C U R R E N T
Figure 19. Resistive Switching Time, ton
Figure 20. Resistive Switching Time, tsi
500
8
I C = 5 IB 1 = 2 IB 2 V CC = 3 0 0 V P W = 40 u s
I B1 = I B2 V CC = 1 5 V V Z = 300 V LC = 200 uH
tSTG[u s], S T R O A G E T IM E
6
o
tF[n s], F A LL T IM E
Tj = 25 C
o
I C = 2 A , T j = 125 C I C = 1 A , T j = 25 C 4 IC = 2 A , T j = 25 C I C = 1 A , T j = 125 C 2
o o o
Tj = 125 C
o
100 0.5 1 3
0 1 5 10 11
I C [A ], C O L L E C T O R C U R R E N T
h FE , F O R C E D G A IN
Figure 21. Resistive Switching Time, tfi
Figure 22. Inductive Switching Time, tsi
1400
2500
1200
I B1 = I B2 V CC = 1 5 V VZ = 300 V LC = 200 uH
I C = 2 A , T j = 125 C
o
2000
I B1 = I B2 V CC = 1 5 V VZ = 300 V LC = 200 uH
1000
800
tC[n s], C R O S S O V E R TIM E
I C = 2 A , T j = 125 C
o
tF[n s], FA LL TIM E
1500
600 IC = 1 A , T j = 125 C 400
o
I C = 2 A , T j = 25 C
o
1000
500
I C = 1 A , T j = 125 C
o
200 I C = 2 A , T j = 25 C 0 1
o
I C = 1 A , T j = 25 C
o
I C = 1 A , T j = 25 C 0
o
5
10
11
1
5
10
11
h FE , F o rc e d G a in
h FE , F o rc e d G a in
Figure 23. Inductive Switching Time, tfi
Figure 24. Inductive Switching Time, tc
(c)2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC5504D/KSC5504DT
Typical Characteristics (Continued)
100
100
T C = 25 C
o
90
IC [A], COLLECTOR CURRENT
PC[W ], P O W E R D IS S IP A T IO N
1000
80 70 60 50 40 30 20 10
10
50us 1m s
5m s
1
DC
0.1
0.01 10 100
0 0 25
o
50
75
100
125
150
V C E [V ], C O LLE C T O R EM IT TE R V O LT A G E
T C [ C ], C A S E T E M P E R A T U R E
Figure 25. Forward Bias Safe Operating Area
Figure 26. Power Derating
(c)2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC5504D/KSC5504DT
Package Demensions
TO-220
9.90 0.20
1.30 0.10 2.80 0.10
4.50 0.20
(8.70) o3.60 0.10
(1.70)
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
Dimensions in Millimeters
(c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM
PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM
StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2001 Fairchild Semiconductor Corporation
Rev. H3

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